2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N
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2N MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.
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The Microchip 2m6661 and logo, the Microchip logo, AnyRate. Application Notes Download All. GestIC is a registered trademarks of Microchip Technology. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates.
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It is your responsibility to. KG, a subsidiary of Microchip. Buy from the Microchip Store. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.
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