2N6661 DATASHEET PDF

2N 2NJANTX. JANTX2N (std Au leads). 2NJTX02 .. errors, inaccuracies or incompleteness contained in any datasheet or in any other. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ. Prelim. 6/ Semelab plc. Telephone +44(0) Fax +44(0) E-mail: [email protected] Website: 2N

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2N MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices.

We at Microchip are committed to continuously improving the code protection features of our. Note the following details of the code protection feature on Microchip devices: Only show products with samples. We at Microchip are committed to continuously improving the code protection features of our products.

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The Microchip 2m6661 and logo, the Microchip logo, AnyRate. Application Notes Download All. GestIC is a registered trademarks of Microchip Technology. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates.

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New Jersey Semiconductor

It is your responsibility to. KG, a subsidiary of Microchip. Buy from the Microchip Store. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain.

2N6661 Datasheet

Microchip Technology Incorporated in the U. All other trademarks mentioned herein are property of their respective companies. Silicon Storage Technology is a registered trademark of. Tempe, Arizona; Gresham, Oregon and design centers in California. Code protection does not.